| 38130010.00 |
Preparations and charges for fire-extinguishers |
kilogram/ |
35% |
|
L/ |
-- |
| 38130020.00 |
Charged fire-extinguishing grenades |
kilogram/ |
70% |
|
|
Compare-38130010.00 |
| 38140000.00 |
Organic composite solvents and thinners, not elsewhere specified or included; prepared paint or varnish removers |
kilogram/ |
50% |
|
|
Compare-38130020.00 |
| 38151100.00 |
With nickel or nickel compounds as the active substance |
kilogram/ |
35% |
|
|
Compare-38140000.00 |
| 38151200.10 |
Supported platinum catalyst(for recycling tritium from heavy water or for producing heavy water especially designed or prepared, used for acceler- ating hydrogen and water, the hydrogen isotope exchange reaction between) |
kilogram/ |
35% |
3 |
|
Compare-38151100.00 |
| 38151200.90 |
Other supported catalysts with precious metal or its compounds as the active substance |
kilogram/ |
35% |
|
|
Compare-38151200.10 |
| 38151900.00 |
Other supported catalysts |
kilogram/ |
35% |
|
|
Compare-38151200.90 |
| 38159000.00 |
Reaction initiators, accelerators and other catalytic preparations, not elsewhere specified or included |
kilogram/ |
35% |
|
|
Compare-38151900.00 |
| 38160010.00 |
Compacted dolomite |
kilogram/ |
40% |
|
|
Compare-38159000.00 |
| 38160020.00 |
Other refractory cement, plaster, and similar refractory materials |
kilogram/ |
35% |
|
|
Compare-38160010.00 |
| 38170000.00 |
Mixed alkylbenzenes and alkylnaphthalenes |
kilogram/ |
35% |
|
|
Compare-38160020.00 |
| 38180012.00 |
Monocrystalline silicon wafers with a diameter of 7.5 cm ≤ diameter ≤ 15.24 cm and a thickness of more than 220 microns |
kilogram/slice |
11% |
|
|
Compare-38170000.00 |
| 38180013.00 |
Monocrystalline silicon wafers with a diameter of 7.5 cm ≤ diameter ≤ 15.24 cm and a thickness of 220 microns or less |
kilogram/slice |
11% |
|
|
Compare-38180012.00 |
| 38180014.10 |
Doped monocrystalline silicon wafers for electronic industry with a thickness of more than 220 microns, diameter exceeding 15.24 cm but less than 20.32 cm |
kilogram/slice |
11% |
|
|
Compare-38180013.00 |
| 38180014.20 |
Doped monocrystalline silicon wafers for electronic industry with a thickness of more than 220 microns, diameter of 20.32 cm or more but less than 30.48 cm |
kilogram/slice |
11% |
|
|
Compare-38180014.10 |
| 38180014.90 |
Other doped monocrystalline silicon wafers for electronic industry with a thickness of more than 220 microns |
kilogram/slice |
11% |
|
|
Compare-38180014.20 |
| 38180015.10 |
Doped monocrystalline silicon wafers for electronic industry with a thickness of 220 microns or less, diameter exceeding 15.24 cm but less than 20.32 cm |
kilogram/slice |
11% |
|
|
Compare-38180014.90 |
| 38180015.20 |
Single crystal silicon slices doped for use in the electronics industry with a thickness of 220 micrometers or less, with a diameter of 20.32 cm or more but less than 30.48 cm |
kilogram/slice |
11% |
|
|
Compare-38180015.10 |
| 38180015.90 |
Other single crystal silicon slices doped for use in the electronics industry with a thickness of 220 micrometers or less |
kilogram/slice |
11% |
|
|
Compare-38180015.20 |
| 38180090.20 |
Doped gallium nitride, gallium oxide, gallium phosphide, gallium arsenide, indium gallium arsenide, gallium selenide, gallium antimonide, phosphorous germanium zinc, germanium dioxide, and germanium tetrachloride for electronic industry |
kilogram/ |
17% |
3 |
|
Compare-38180015.90 |
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